Related Experiment Video
Updated: Sep 16, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Gate-voltage-dependent differential conductance via entangled-state tunneling in quantum point contacts
1Asia Pacific Center for Theoretical Physics, Pohang, Gyeongbuk 37673, Republic of Korea.
None:
The gate-voltage-dependent differential conductance in quantum point contacts, shaped by entangled-state tunneling, is demonstrated through the gate-voltage-induced displacement of a localized spin. This displacement leads to left-right asymmetric Kondo coupling at low gate voltages, transitioning to symmetric Kondo coupling at higher voltages. To analyze this behavior, we employ the Green's function technique in Liouville space, which allows for the systematic construction of basis vectors represented by operators. The entanglement between left and right dynamics gives rise to an additional coherent side peak, which plays a crucial role in reproducing the observed differential conductance line shape. By determining model parameters phenomenologically, we successfully replicate the experimentally observed gate-voltage-dependent conductance features.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electric Potential Energy of Two Point Charges