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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Sep 16, 2025

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Perovskite Solar Cells Modified with Conjugated Self-Assembled Monolayers at Buried Interfaces.

Guorong Zhou^1,2, Faeze Hashemi³, Changzeng Ding^1,4

¹i-Lab & Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China.

Nanomaterials (Basel, Switzerland)

|July 12, 2025

Summary

Researchers improved inverted perovskite solar cells (PSCs) by optimizing the buried interface with novel self-assembled monolayers (SAMs). This enhanced perovskite crystal quality, reduced defects, and boosted efficiency and stability in PSC devices.

Keywords:

buried interface perovskite solar cells power conversion efficiency self-assembled monolayer stability

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Last Updated: Sep 16, 2025

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Published on: February 27, 2017

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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Inverted perovskite solar cells (PSCs) show promise for low-cost, stable solar energy.
Research often focuses on perovskite surface passivation, neglecting the critical buried interface.
Poor interfacial contact in PSCs hinders performance and progress.

Purpose of the Study:

To investigate the impact of novel self-assembled monolayers (SAMs) on the buried interface of inverted PSCs.
To address poor interfacial contact between nickel oxide (NiOX) and perovskite layers.
To enhance perovskite crystal quality, reduce defects, and improve device performance and stability.

Main Methods:

Introduction of a conjugated SAM (XS21) and a phosphonic acid-based SAM (MeO-2PACz) at the NiOX/perovskite interface.
Systematic evaluation of SAM influence on perovskite layer crystallinity and defect density.
Assessment of hole extraction, transport efficiency, power conversion efficiency (PCE), and operational stability.

Main Results:

Both XS21 and MeO-2PACz SAMs significantly improved perovskite crystallinity.
Defect densities were reduced, and non-radiative recombination was suppressed by the SAMs.
XS21-based PSCs achieved 21.43% PCE, while MeO-2PACz-based PSCs reached 22.43% PCE, with enhanced stability.

Conclusions:

Optimizing the buried interface with tailored SAMs is crucial for high-performance inverted PSCs.
XS21 and MeO-2PACz effectively passivate the NiOX/perovskite interface, boosting device efficiency and longevity.
This study highlights a promising strategy for advancing perovskite solar cell technology.