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Dynamic atomic-scale electron avalanche breakdown in solid dielectrics.

Jian Wang1, Zhong-Hui Shen2,3, Wei Li4

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Summary
This summary is machine-generated.

We developed an atomic-scale model to understand electron avalanche breakdown in dielectrics. This model led to a high-entropy strategy improving breakdown strength by 250% in BaTiO3-based materials.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Electron avalanche breakdown is critical for semiconductor and insulator performance.
  • Understanding and controlling this transient process in micro-nanoelectronics and power systems remains a challenge.

Purpose of the Study:

  • To propose and demonstrate an atomic-scale model for electron avalanche breakdown.
  • To investigate electron dynamics under high electric fields in diverse dielectrics.
  • To establish relationships between material properties and breakdown strength.

Main Methods:

  • Atomic-scale modeling of electron avalanche breakdown.
  • High-throughput computational calculations.
  • Development of relationship maps and mathematical expressions for key parameters.
  • Application of a high-entropy strategy in BaTiO3-based dielectrics.

Main Results:

  • Established quantitative relationships between ionization energy, bond energy, electron mean free path, and breakdown strength.
  • Demonstrated a 250% improvement in breakdown strength for BaTiO3-based dielectrics using a high-entropy strategy.
  • Showcased the ability to control electron avalanche by regulating lattice distortion and preventing electron energy gain.

Conclusions:

  • Atomic-scale understanding of electron avalanche breakdown provides refined guidance for material design.
  • The developed strategy enables breaking the inverse relationship between dielectric breakdown strength and permittivity.
  • This work offers new avenues for engineering dielectrics with enhanced reliability and efficiency.