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Related Concept Videos

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Direct observation of intra-grain defect formation during local solid-phase epitaxy.

Manabu Tezura1, Takanori Asano2, Riichiro Takaishi2

  • 1Frontier Technology Research and Development Institute, KIOXIA Corporation, 3-13-1 Moriya-cho, Kanagawa-ku, Yokohama-shi, 221-0022, Kanagawa, Japan. manabu1.tezura@kioxia.com.

Scientific Reports
|July 13, 2025
PubMed
Summary
This summary is machine-generated.

Defect-free polycrystalline silicon films remain elusive. This study reveals that abnormal atomic plane growth during crystallization, specifically discontinuous solid-phase epitaxy, creates defects within silicon grains, impacting film properties.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Achieving defect-free polycrystalline films via solid-phase crystallization (SPC) is a persistent challenge in semiconductor fabrication.
  • Understanding intermediate processes during crystal growth is key to suppressing defects in polycrystalline silicon (poly-Si) films.

Purpose of the Study:

  • To directly observe and analyze the elementary processes of crystal growth at local crystalline Si (c-Si)/amorphous Si (a-Si) interfaces.
  • To identify the mechanisms responsible for defect formation within Si grains during SPC.

Main Methods:

  • In situ high-resolution transmission electron microscopy (HRTEM) was employed to observe Si thin film crystallization.
  • Sequential atomic plane formation was analyzed with a time resolution of 10 milliseconds.

Main Results:

  • Two distinct crystal growth modes were identified at c-Si/a-Si interfaces: continuous solid-phase epitaxy (SPE) and a newly discovered discontinuous SPE.
  • Continuous SPE resulted in defect-free Si grains, while discontinuous SPE led to internal uncrystallized regions, initiating intra-grain defects.

Conclusions:

  • Intra-grain defects in poly-Si films originate from abnormal atomic plane growth dynamics during crystallization.
  • The newly identified discontinuous SPE mode is a primary source of defects, degrading electrical properties of poly-films.