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Updated: Jun 23, 2026
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Stacking-Selective Epitaxy of Rare-Earth Diantimonides
Reiley Dorrian1, Jinwoong Kim2, Mizuki Ohno1
1Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States.
Abstract:
Deterministic control of the layering configuration of two-dimensional quantum materials plays a central role in studying their emergent electronic properties. Here we demonstrate in situ control over competing stacking configurations in thin film crystals of the rare-earth diantimonides by synthesizing in proximity to competing structural orders. A crossover between the epitaxially stabilized monoclinic structure and the orthorhombic structure commonly observed in bulk crystals is navigated through three axes─the relative cation/anion ratio, growth temperature, and choice of lanthanide ion─culminating with a comparative magnetotransport study of single-yet-distinct phase CeSb2 films. These results set the stage for an expanded search for hidden stacking configurations in layered compounds which have evaded detection.
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