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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

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Stacking-Selective Epitaxy of Rare-Earth Diantimonides.

Reiley Dorrian¹, Jinwoong Kim², Mizuki Ohno¹

¹Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States.

|July 14, 2025

Summary

Researchers precisely controlled the atomic arrangement in rare-earth diantimonide thin films. This control enables the study of unique electronic properties in two-dimensional quantum materials.

Keywords:

Rare-Earth Antimonides Stacking Order Thin-Film Growth Two-Dimensional Materials

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Area of Science:

Materials Science
Condensed Matter Physics
Quantum Materials

Background:

Controlling the layering configuration of 2D quantum materials is crucial for understanding their electronic properties.
Rare-earth diantimonides are layered compounds with potential for emergent electronic phenomena.

Purpose of the Study:

To demonstrate in situ control over competing stacking configurations in rare-earth diantimonide thin films.
To explore the relationship between synthesis parameters and resulting crystal structures.
To investigate the electronic properties of distinct stacking configurations.

Main Methods:

Synthesis of thin film crystals of rare-earth diantimonides.
Tuning of cation/anion ratio, growth temperature, and lanthanide ion.
Comparative magnetotransport studies of single-phase films.

Main Results:

Achieved deterministic control over monoclinic and orthorhombic stacking configurations.
Identified key synthesis parameters influencing structural crossovers.
Demonstrated distinct magnetotransport properties in different stacking configurations of CeSb2 films.

Conclusions:

Precise control over stacking configurations in layered materials is achievable.
This control opens avenues for discovering new electronic properties in layered compounds.
The findings facilitate the search for previously undetected stacking configurations.