Stacking-Selective Epitaxy of Rare-Earth Diantimonides

Area of Science:

• Materials Science
• Condensed Matter Physics
• Quantum Materials

Background:

• Controlling the layering configuration of 2D quantum materials is crucial for understanding their electronic properties.
• Rare-earth diantimonides are layered compounds with potential for emergent electronic phenomena.

Purpose of the Study:

• To demonstrate in situ control over competing stacking configurations in rare-earth diantimonide thin films.
• To explore the relationship between synthesis parameters and resulting crystal structures.
• To investigate the electronic properties of distinct stacking configurations.

Main Methods:

• Synthesis of thin film crystals of rare-earth diantimonides.
• Tuning of cation/anion ratio, growth temperature, and lanthanide ion.
• Comparative magnetotransport studies of single-phase films.

Main Results:

• Achieved deterministic control over monoclinic and orthorhombic stacking configurations.
• Identified key synthesis parameters influencing structural crossovers.
• Demonstrated distinct magnetotransport properties in different stacking configurations of CeSb2 films.

Conclusions:

• Precise control over stacking configurations in layered materials is achievable.
• This control opens avenues for discovering new electronic properties in layered compounds.
• The findings facilitate the search for previously undetected stacking configurations.