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Chalcogenide semiconductors: charge carrier dynamics and optoelectronic applications
Yujie Yang1,2, Qianqian Lin1,2,3
1Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China. q.lin@whu.edu.cn.
Chemical Communications (Cambridge, England)
|July 16, 2025
Summary
Antimony and bismuth chalcogenides offer low-cost, stable semiconductors for optoelectronics. Research focuses on improving charge carrier dynamics to enhance device performance for future applications.
Area of Science:
- Materials Science
- Solid State Physics
- Optoelectronics
Background:
- Chalcogenides are promising next-generation semiconductors due to low cost, stability, and tunable optoelectronic properties.
- Current device performance of chalcogenides lags behind perovskite and organic alternatives.
- A critical challenge lies in optimizing charge carrier dynamics for improved performance.
Purpose of the Study:
- To review recent advancements in antimony- and bismuth-based chalcogenide semiconductors.
- To highlight material fabrication, charge carrier dynamics characterization, and optoelectronic applications.
- To identify challenges and future directions in chalcogenide optoelectronics.
Main Methods:
- Focus on material fabrication techniques for antimony- and bismuth-based chalcogenides.
- Characterization of charge carrier dynamics using advanced techniques.
- Exploration of optoelectronic device applications.
Main Results:
- Summarized research progress in antimony- and bismuth-based chalcogenide semiconductors.
- Detailed characterization of charge carrier dynamics.
- Demonstrated potential in various optoelectronic applications.
Conclusions:
- Antimony- and bismuth-based chalcogenides show significant potential for low-cost, high-performance optoelectronic devices.
- Further research into charge carrier dynamics is crucial for device optimization.
- Chalcogenides are poised for broader adoption in next-generation optoelectronics.
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