Exploring the Application of Gold-Assisted Exfoliation in Large-scale Integration of n-Type and p-Type 2D-FETs

2D materials, with their atomic-scale thickness and exceptional electronic properties, hold immense potential for advancing transistor technologies beyond silicon's limitations. While large-area growth techniques like metal-organic chemical vapor deposition (MOCVD) enable scalable device fabrication, achieving monolayers with high crystallinity remains challenging. Recently, gold-assisted mechanical exfoliation has emerged as a promising alternative, offering large-area monolayers isolated directly from bulk crystals. In this work, gold-assisted mechanical exfoliation is utilized to obtain large-area monolayers of MoS₂ and WSe₂ and fabricate over 100 NMOS and 100 PMOS FETs - the largest statistical dataset of FETs created with gold-assisted exfoliation and the first to include p-FET performance analysis. Leveraging these devices, the performance of CMOS inverter circuits is constructed and evaluated. This study establishes gold-assisted exfoliation as a reliable technique for obtaining large-area 2D materials and highlights the need to optimize bulk crystal growth processes for large-area monolayer production.