Related Experiment Video
Updated: Sep 15, 2025

07:03
Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
8.9K
Colossal Intrinsic Phase-Shift in Broad sub-Terahertz Band Enabled by Magnetoelastic Coupling for 6G Communication
Brijesh Singh Mehra1, Sanjeev Kumar1, Gaurav Dubey1
1Indian Institute of Science Education and Research Bhopal, Bhopal, Madhya Pradesh 462066, India.
ACS Applied Materials & Interfaces
|July 16, 2025
Summary
We discovered a novel magnetoelastic mechanism in Ba3BiRu2O9 for colossal Terahertz (THz) phase shifts, enabling efficient 6G communication devices. This breakthrough offers a linear phase-frequency relationship for THz wave modulation.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Telecommunications Engineering
Background:
- Terahertz (THz) communication for 6G necessitates efficient functional devices like modulators.
- Current THz phase control methods using metamaterials have limited bandwidth and are complex/costly.
Purpose of the Study:
- To introduce a novel, intrinsic method for achieving significant THz phase shifts using the magnetoelastic mechanism.
- To demonstrate a new material, Ba3BiRu2O9, for THz phase modulation.
Main Methods:
- Investigated the magnetoelastic mechanism in Ba3BiRu2O9 for THz phase shift.
- Characterized the material's THz phase-frequency relationship and thermal bistability.
- Performed theoretical calculations to understand the underlying physics of phonon-spin coupling.
Main Results:
- Achieved an intrinsic colossal THz phase shift of ~566° at 0.75 THz.
- Demonstrated a linear phase-frequency relationship from 100-750 GHz, outperforming existing meta-modulators.
- Observed thermally bistable phase shifts and magnetodielectric control.
Conclusions:
- The colossal THz phase shift is attributed to magnetoelastic coupling and dielectric phase modulation.
- Ba3BiRu2O9 shows promise for advanced THz communication devices.
- Proposed a proof-of-concept MODEM system utilizing the material's linear THz phase-frequency response.
Related Concept Videos
Propagation Speed of Electromagnetic Waves
4.0K
Electromagnetic waves are consistent with Ampere's law. Assuming there is no conduction current Ampere's law is given as:
4.0K
Biasing of Metal-Semiconductor Junctions
336
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
336

