Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
Thermal Sigmatropic Reactions: Overview01:16

Thermal Sigmatropic Reactions: Overview

2.2K
Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in...
2.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

335
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
335

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Light-Triggered Bending in Photochromic/Graphene Oxide Bilayers via Synergistic Photo-Thermal Actuation and Mechanical Amplification.

ACS applied materials & interfaces·2026
Same author

Statistical insight into the correlation of geometry and spectral emission in network lasers.

Optics letters·2026
Same author

Enhanced Sensitivity of Sub-THz Thermomechanical Bolometers Exploiting Vibrational Nonlinearity.

ACS photonics·2026
Same author

Electrons and Phonons in Pentacene: Coupling Patterns Reveal the Microscopic Origin of the Phonon Limited Mobility.

The journal of physical chemistry. C, Nanomaterials and interfaces·2025
Same author

Shedding light on epitaxial SiGeSn alloys with Raman spectroscopy: local order and thermomechanical properties.

Journal of physics. Condensed matter : an Institute of Physics journal·2025
Same author

Structural Instability of Human Serum Albumin during Microparticles Synthesis.

ACS applied bio materials·2025

Related Experiment Video

Updated: Sep 15, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
04:22

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering

Published on: May 17, 2024

3.0K

Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices.

Patrizio Graziosi1, Damiano Marian2, Andrea Tomadin2

  • 1CNR - ISMN, Via P. Gobetti 101, Bologna 40129, Italy.

ACS Applied Energy Materials
|July 18, 2025
PubMed
Summary

Thermoelectric devices using silicon-germanium-tin (SiGeSn) alloys show promise for Green-IT. These materials achieve a figure of merit (ZT) over 1 at typical on-chip temperatures, enabling efficient energy conversion.

Keywords:
Boltzmann transportCMOSSiGeSnlattice thermal propertiesthermoelectrics

More Related Videos

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

444
Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
09:09

Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation

Published on: February 5, 2020

7.0K

Related Experiment Videos

Last Updated: Sep 15, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
04:22

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering

Published on: May 17, 2024

3.0K
Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

444
Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
09:09

Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation

Published on: February 5, 2020

7.0K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Green Information Technology (Green-IT)

Background:

  • Thermoelectric devices offer potential for waste heat recovery and solid-state cooling.
  • Integrating thermoelectric materials into microelectronic platforms is crucial for advanced Green-IT applications.
  • Silicon-Germanium-Tin (SiGeSn) alloys are emerging as a CMOS-compatible material system with tunable thermoelectric properties.

Purpose of the Study:

  • To evaluate the thermoelectric properties of heteroepitaxial SiGeSn alloys.
  • To assess the potential of SiGeSn for thermoelectric device applications within the Green-IT realm.
  • To investigate the figure of merit (ZT) and power factor of SiGeSn/Ge/Si layers.

Main Methods:

  • Experimental measurement of lattice thermal conductivity using the 3-ω method.
  • Calculation of thermoelectric figure of merit (ZT) using the Boltzmann transport equation.
  • Consideration of intervalley scattering processes in the multivalley SiGeSn material system.

Main Results:

  • Experimentally determined low lattice thermal conductivity of SiGeSn/Ge/Si layers (∼1-2 W/m·K).
  • Achieved figure of merit (ZT) exceeding 1 for both p- and n-type SiGeSn at 300-400 K.
  • Predicted competitive power factor values of approximately 20 μW/cm·K² within the operating temperature range.

Conclusions:

  • SiGeSn alloys demonstrate significant potential for thermoelectric applications in Green-IT.
  • The investigated Si-based materials exhibit excellent prospects for real-world thermoelectric device integration.
  • These findings encourage further scientific research into SiGeSn for energy harvesting and thermal management.