Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

929
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
929
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

484
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
484
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

335
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
335
Biasing of FET01:22

Biasing of FET

371
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
371
Biasing of P-N Junction01:16

Biasing of P-N Junction

884
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
884
Switching of BJT01:22

Switching of BJT

503
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
503

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Interplay of Crystallization and Amorphous Spinodal Decomposition During Thermal Annealing of Organic Photoactive Layers.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Synergistic effects in ambipolar blends of mixed ionic-electronic conductors.

Materials horizons·2025
Same author

Ambipolar blend-based organic electrochemical transistors and inverters.

Nature communications·2022
Same author

Universal electrode for ambipolar charge injection in organic electronic devices.

Materials horizons·2022
Same author

Toward Fast Screening of Organic Solar Cell Blends.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2020
Same author

Interlayers Self-Generated by Additive-Metal Interactions in Organic Electronic Devices.

Advanced materials (Deerfield Beach, Fla.)·2018

Related Experiment Video

Updated: Sep 15, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Balanced Ambipolar OECTs through Tunability of Blend Microstructure.

Noam Moscovich1, Sasha Simotko1,2, Efrat Reyn1

  • 1Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel.

ACS Applied Materials & Interfaces
|July 18, 2025
PubMed
Summary

Researchers developed balanced ambipolar organic electrochemical transistors (OECTs) by blending p-type and n-type materials. Tuning film microstructure through composition and thermal treatment is key for advanced bioelectronics.

Keywords:
ambipolarityblendsmicrostructureorganic electrochemical transistororganic mixed ionic electronic conductors

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

817

Related Experiment Videos

Last Updated: Sep 15, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

817

Area of Science:

  • Materials Science
  • Bioelectronics
  • Organic Electronics

Background:

  • Organic electrochemical transistors (OECTs) are crucial for bioelectronics, interfacing biological signals with electronic circuits.
  • Ambipolar OECTs, exhibiting both n- and p-type transport, are highly sought after for simplified designs and improved sensing.
  • Achieving balanced ambipolar performance in OECTs presents a significant materials science challenge.

Purpose of the Study:

  • To demonstrate a method for achieving balanced ambipolar performance in OECTs.
  • To investigate the correlation between blend microstructure and device performance.
  • To establish a framework and design rules for creating high-performance ambipolar OECTs.

Main Methods:

  • Blending unipolar p-type and n-type organic mixed ionic-electronic conductors (OMIECs).
  • Tuning film microstructure via composition and thermal treatment.
  • Comprehensive electrochemical and microstructural characterization (e.g., phase separation, crystallinity).

Main Results:

  • Successfully attained balanced ambipolar OECTs with near-equal n- and p-type performances.
  • Demonstrated that blend microstructure (phase separation, domain continuity, crystallinity) dictates volumetric capacitance and charge mobility.
  • Identified distinct blend organizations based on material miscibility and self-assembly tendencies.

Conclusions:

  • Microstructure control through informed material selection, composition, and thermal annealing is essential for balanced ambipolar OECTs.
  • The blend strategy provides a versatile approach for advancing bioelectronic devices.
  • Proposed design rules and a rational framework for microstructure engineering in OECTs.