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Published on: May 29, 2018
Interfacial Mirror Symmetry Breaking Induced Helicity-Dependent Photocurrents in hBN/CrPS4 Heterostructure
Shanqing Li1,2, Xiuhua Xie2,3, Xueyan Cui1
1School of Electronic Science and Engineering (School of Microelectronics), Guangdong Province Key Lab of Chip and Integration Technology, South China Normal University, Foshan 528225, P.R. China.
Abstract:
Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS4 heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.
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