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Reconfigurable Submicron Electromechanical Switch with Volatile/Non-Volatile Conversion for Radiation-Hardened
Dianlun Li1, Junchang Chen2, Junchang Yang3
1National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
This study introduces a novel nanowire switch that can function as both volatile logic and non-volatile memory. This reconfigurable microelectromechanical switch demonstrates excellent radiation hardness for advanced electronics.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Micro- and nanoelectromechanical (MEM/NEM) switches are crucial for high-radiation environments like nuclear and space industries.
- Current MEM/NEM systems require separate volatile switches for logic and non-volatile switches for memory.
- A single MEM/NEM switch capable of both functions has not been previously demonstrated.
Purpose of the Study:
- To develop a single reconfigurable submicron electromechanical switch with on-demand volatile/non-volatile conversion.
- To enable unified integration of logic and memory in radiation-hardened electronics.
- To demonstrate the switch's performance in high-radiation environments.
Main Methods:
- Utilized a well-engineered nanowire (NW) cantilever for switch design.
- Leveraged bidirectional Lorentz forces controlled by applied magnetic fields and ON-state bias current for mode selection.
- Employed a reverse driving current for non-volatile mode reset, modulating Lorentz, mechanical restoring, and adhesive forces.
Main Results:
- Demonstrated a reconfigurable nanowire switch with on-demand conversion between volatile and non-volatile modes.
- Achieved selective operation via magnetic field and bias current, with reset using reverse current.
- Experimentally verified radiation-hard performance up to 10 Mrad 60Co gamma irradiation with no degradation.
Conclusions:
- The developed NW-based electromechanical switch successfully integrates logic and memory functions.
- The switch exhibits exceptional radiation hardness, far exceeding silicon-based transistors.
- This technology offers potential for reduced data transfer time and lower power consumption in radiation-hardened electronics.
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