Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Switchable band alignment in 2D-perovskite/WS<sub>2</sub>heterostructures for tunable exciton transport and valley polarization.

Reports on progress in physics. Physical Society (Great Britain)·2026
Same author

Polarized and Directional Single-Photon Emission in WSe<sub>2</sub> Enhanced by q-BIC Nanoantennae.

Nano letters·2026
Same author

Bottom-up synthesis of molecular nanodiamond from nanographene.

Nature·2026
Same author

Schizophrenia risk gene ZNF804A controls ribosome localization and synaptogenesis in developing human neurons.

Science advances·2026
Same author

Ultrasound-assisted size tuning of polyacrylic acid coated magnetic nanoparticle clusters for biomedical applications.

Ultrasonics sonochemistry·2026
Same author

Lorentz skew scattering nonreciprocal magneto-transport.

Nature communications·2026

Related Experiment Video

Updated: Jul 7, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC.

Paul Fisher1, Alexander Zappacosta1, Jens Fuhrmann1

  • 1Institute for Quantum Optics, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany.

Nano Letters
|July 22, 2025
PubMed
Summary
This summary is machine-generated.

Researchers demonstrate nanoscale nuclear magnetic resonance (NMR) using silicon carbide, achieving high spectral resolution for single-molecule analysis. This breakthrough enables potential low-cost NMR spectrometers for molecular dynamics research.

Keywords:
CMOS compatibleSynchronized Readoutmagnetic field sensitivityquantum sensingsilicon carbidesilicon vacancysingle defect

More Related Videos

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

Related Experiment Videos

Last Updated: Jul 7, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

Area of Science:

  • Physics
  • Materials Science
  • Chemistry

Background:

  • High-resolution nanoscale nuclear magnetic resonance (NMR) is crucial for single-molecule dynamics and structural analysis.
  • Nitrogen vacancy centers in diamond were previously the sole platform for single-defect NMR sensing at sub-Hertz resolution.

Purpose of the Study:

  • To demonstrate single-defect NMR sensing using a silicon vacancy in silicon carbide.
  • To achieve sub-Hertz spectral resolution for nanoscale NMR.
  • To explore the potential for scalable, low-cost NMR spectrometers.

Main Methods:

  • Utilized a single silicon vacancy defect in commercial 4H-silicon carbide under CMOS-compatible conditions.
  • Employed the Synchronized Readout technique at room temperature.
  • Measured a test signal to assess spectral resolution and magnetic sensitivity.

Main Results:

  • Achieved a spectral resolution of 0.33 Hz, vital for molecular structure determination.
  • Estimated a magnetic sensitivity of 358 μT/√Hz.
  • Identified necessary improvements for single-proton spin sensitivity.

Conclusions:

  • Demonstrated a novel platform for nanoscale NMR sensing using silicon carbide.
  • The system shows promise for scalable, low-cost NMR spectrometers when combined with integrated photonics.
  • Highlights the potential of silicon carbide as an industry-mature material for advanced sensing applications.