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Related Experiment Video

Updated: Sep 14, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Optical Autocorrelator Based on InSe-Integrated Silicon Waveguide.

Yu Zhang¹, Xiaoqing Chen^1,2, Mingwen Zhang¹

¹Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129 China.

|July 22, 2025

Summary

This summary is machine-generated.

We developed a new on-chip autocorrelator using indium selenide (InSe) integrated onto silicon waveguides. This device achieves highly sensitive ultrafast optical pulse measurements with significantly lower power requirements.

Keywords:

InSe Optical autocorrelator Second harmonic Generation Ultrashort pulse measurement

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Area of Science:

Photonics
Materials Science
Nonlinear Optics

Background:

Ultrafast optical pulse characterization is crucial for scientific research and technological applications.
Integrated photonic devices offer miniaturization and enhanced performance for optical measurements.
Existing integrated autocorrelators often require high optical power, limiting their practical use.

Purpose of the Study:

To demonstrate a novel on-chip single-shot autocorrelator.
To leverage the nonlinear properties of few-layer indium selenide (InSe) for enhanced optical measurements.
To achieve highly sensitive and low-power operation for ultrafast pulse characterization.

Main Methods:

Integration of few-layer InSe onto a silicon waveguide.
Utilizing strong second-order nonlinearity of InSe for second harmonic generation (SHG).
Mapping the spatial intensity distribution of the SHG signal to the time domain for pulse characterization.

Main Results:

Successful demonstration of an on-chip single-shot autocorrelator.
Characterization of temporal pulse profiles and group indices of waveguide modes.
Achieved high sensitivity (2.4 × 10^-8 W²) with low pulse peak power (down to 11 mW).

Conclusions:

The InSe-integrated silicon waveguide autocorrelator offers superior sensitivity and lower power consumption compared to conventional devices.
This technology shows significant promise for advancing ultrafast optical pulse measurements in photonic integrated circuits.
The enhanced light-matter interaction in the nanophotonic structure is key to the device's performance.