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Updated: Sep 14, 2025

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Recent advances on neutron-irradiated point defects in h-BN for quantum applications
Shantanu Saha1, Shrivatch Sankar2, Shamsul Arafin2
1Department of Electrical, Electronics and Communication Engineering, GITAM School of Technology, GITAM (Deemed to be University), Hyderabad, Telangana 502329, India.
None:
Two dimensional layered hexagonal boron nitride (h-BN) has recently emerged as a promising quantum material for quantum information science and engineering primarily due to its excellent chemo-mechanical stability and efficacy in hosting quantum point defects (QPDs). These QPDs potentially act as spin based quantum devices and systems which exhibit valuable quantum properties, making them highly sought after in quantum research. This mini-review focuses on the recent progress of neutron irradiated h-BN, the resulting QPDs, and how they function as spin-based quantum sensors. We also outline the key technical challenges associated with the development of high performance quantum devices as well as the improvements needed to enhance quantum properties in such neutron irradiated h-BN. Our review is expected to accelerate further research on neutron irradiation of h-BN for quantum applications and drive interest in the deterministic creation of spin-based quantum emitters.
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