Ultra-Broadband Polarization-Sensitive O-Doped ZrTe3 Photodetector Induced by UV Laser
Chunyu Song1, Jiahao Chen2, Xin Ding1
1Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 WeiJin Road, Tianjin, 300072, China.
Abstract:
Next-generation photodetectors demand multidimensional information perception, high responsivity, and low noise equivalent power across an ultra-wide spectral range. Polarization-sensitive photodetectors based on anisotropic low-dimensional materials offer a promising solution, yet inherent material properties impose severe performance trade-offs. Here, this challenge is addressed by developing an ultra-broadband polarization photodetector with back-to-back Schottky barriers, fabricated via UV laser treatment of semi-metallic ZrTe3. The results demonstrate that the ZrTe3 polarization photodetector achieves ultra-wide spectral polarized light response from UV to terahertz (355 nm-1.43 mm) with antenna-free integration at room temperature. Notably, it exhibits a high responsivity of 0.31 A W-1 with rise/fall times of 729 ns/14.9 µs at 532 nm. One-year-long photoresponse tests in air demonstrate stability for ultra-broadband ZrTe3 polarization detector (UBPD). This work highlights the transformative potential of ZrTe3 for future wide-spectrum polarization-sensitive applications.


