Doping-induced performance optimization in monolayer WS₂ memristor: reduced variability and contact resistance

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Memristors are crucial for advanced non-volatile memory and brain-like computing.
• Two-dimensional transition metal dichalcogenide (TMDC)-based memristors offer advantages over bulk materials.

Purpose of the Study:

• To investigate the impact of dopants on monolayer WS2 memristors.
• To demonstrate how doping can reduce variability and contact resistance.

Main Methods:

• First-principles calculations were used to analyze dopant interactions and electronic properties.
• Calculated interaction energies, tunneling barrier heights, and density of states.

Main Results:

• Doping effectively reduces cycle-to-cycle variability by creating attractive interactions between dopants and vacancies.
• Doping lowers contact resistance by reducing tunneling barriers and increasing probabilities at the electrode/WS2 interface.
• Doping introduces new states in the density of states, allowing for tunable conductance.

Conclusions:

• Doping is a key strategy for optimizing monolayer WS2 memristors.
• Established dopant selection criteria based on electronic configuration can guide future device design.
• This work provides a framework for developing high-performance, low-variability WS2 memristive devices.