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Updated: Sep 14, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Masoud Mansouri1, Fernando Martín1,2, Cristina Díaz3
1Departamento de Química, Módulo 13, Universidad Autónoma de Madrid, Madrid 28049, Spain.
Silicon carbide (SiC) surfaces enable semiconducting graphene for nanoelectronics. Graphene on SiC shows tunable electronic and optical properties, ideal for advanced technological applications.
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