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Exploring the optical and electrical properties of CsSnBr3 for optoelectronic technologies
Dhaifallah R Almalawi1, Mohamed Bouzidi2, Idris H Smaili3
1Department of Physics, College of Science, Taif University, 21944, Taif, Saudi Arabia.
Scientific Reports
|July 23, 2025
Summary
This study explores lead-free cesium tin bromide (CsSnBr3) perovskites, revealing a direct band gap of 1.75 eV and efficient charge transport via small-polaron hopping. These properties suggest potential for optoelectronic devices.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- Lead-free perovskites are crucial for sustainable optoelectronics.
- Cesium tin bromide (CsSnBr3) is a promising lead-free perovskite material.
- Understanding its charge transport mechanisms is key for device applications.
Purpose of the Study:
- To investigate the structural, optical, and electrical properties of melt-grown CsSnBr3.
- To elucidate the charge transport mechanisms in CsSnBr3.
- To establish a correlation between optical carrier dynamics and electrical behavior.
Main Methods:
- Melt growth synthesis of CsSnBr3.
- UV-Vis absorption and Tauc plot analysis for band gap determination.
- Photoluminescence (PL) and time-resolved PL for carrier dynamics.
- Impedance spectroscopy and dielectric analysis for electrical properties.
- Analysis of frequency-dependent conductivity and non-Debye relaxation.
Main Results:
- CsSnBr3 exhibits a direct optical band gap of 1.75 eV.
- Efficient radiative recombination and nanosecond-scale carrier lifetimes were observed.
- Small-polaron hopping is the dominant conduction mechanism.
- A correlation between optical carrier dynamics and low-frequency electrical behavior was established.
Conclusions:
- Melt-grown CsSnBr3 demonstrates favorable optical and electrical properties.
- The identified charge transport mechanisms are suitable for optoelectronic applications.
- This research supports the potential of CsSnBr3 in lead-free photodetectors and solar energy conversion devices.
