The performance of Cu₂MnSnS₄ based solar cells with CZTS as hole transport nanolayer

The development of high-performance photovoltaic materials is a major focus of renewable energy research. Among the most promising candidates are quaternary chalcogenides, renowned for their exceptional electronic and optical properties. In this paper, a conventional Cu₂MnSnS₄-based solar cell is proposed, and numerical analyses are performed using wxAMPS-1D software to optimize the electron transport layer (ETL) and hole transport layer (HTL). Results indicate that using SnS₂ as ETL and CZTS as HTL significantly improves performance, achieving optimal interface energy alignment. Key parameters, including thickness, doping concentration, and defect density for each layer, along with the influence of temperature and contact barrier heights, are analyzed. Optimizing these parameters leads to an efficiency enhancement from an initial 19.43-27.71%, surpassing previously reported values.