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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 19, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
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2D-Seed-Induced Crystallization Strategy Contributes to Blade-Coating FAPbI3-Based Perovskite Solar Cells.

Yumeng Zhang1, Kexin Zhang1, Ruikai Zhang1

  • 1Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

ACS Applied Materials & Interfaces
|July 24, 2025
PubMed
Summary

A novel 2D perovskite seed layer enhances formamidinium lead iodide (FAPbI3) crystallization for efficient and stable perovskite solar cells (PSCs). This method improves film uniformity and device performance, paving the way for scalable PSC fabrication.

Keywords:
2D perovskite seed layerFAPbI3 crystallizationgrain orientationperovskite solar cellsstability

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Area of Science:

  • Materials Science
  • Renewable Energy
  • Photovoltaics

Background:

  • Formamidinium lead iodide (FAPbI3)-based perovskites are excellent photoabsorbers for solar cells due to their bandgap and stability.
  • Scalable fabrication of high-quality FAPbI3 films is challenging due to complex crystallization during blade-coating, impacting device performance and uniformity.

Purpose of the Study:

  • To develop a scalable method for fabricating uniform and highly crystalline FAPbI3 films for perovskite solar cells (PSCs).
  • To improve the power conversion efficiency (PCE) and long-term stability of PSCs by controlling FAPbI3 crystallization.

Main Methods:

  • Introduction of a two-dimensional (2D) perovskite seed layer onto the SnO2 electron transport layer in an n-i-p device architecture.
  • Utilizing the seed layer for heterogeneous nucleation and oriented growth of [PbI6]4- octahedra to promote the formation of the α-FAPbI3 phase.

Main Results:

  • Fabrication of PSCs with an active area of 2.5 × 2.5 cm2 achieved a PCE of 22.03% and an open-circuit voltage (VOC) of 1.10 V.
  • The developed method resulted in enhanced crystallinity and film uniformity of the α-FAPbI3 photoactive layer.
  • Unencapsulated devices retained over 80% of their initial efficiency after 2000 hours of ambient storage.

Conclusions:

  • A scalable and viable pathway for fabricating high-quality α-FAPbI3 films has been established using a 2D perovskite seed layer.
  • The approach significantly enhances the performance and long-term stability of perovskite solar cells.
  • This work holds substantial potential for advancing the development of efficient and stable PSC technology.