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Published on: August 2, 2019
Room temperature quantum metric effect in TbMn6Sn6
Weiyao Zhao1, Kaijian Xing2, Yufei Zhao3
1Department of Materials Science & Engineering, & ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, VIC, Australia.
Researchers demonstrate a tunable, room-temperature second-harmonic transport response in the quantum magnet TbMn6Sn6, driven by quantum geometry effects. This finding paves the way for practical quantum-geometry-based devices operating at ambient temperatures.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Quantum geometry, including Berry curvature and quantum metric, is crucial for understanding topological materials.
- Nonlinear responses in topological materials are key for nonlinear electronic devices.
- Previous studies on quantum geometry effects were limited to cryogenic temperatures.
Purpose of the Study:
- To investigate tuneable room-temperature nonlinear transport responses governed by quantum geometry.
- To explore the potential of quantum magnets for practical device applications.
- To demonstrate the tunability of quantum geometry effects via external stimuli.
Main Methods:
- Studied nonlinear transport responses in the quantum magnet TbMn6Sn6.
- Investigated the influence of magnetic fields on magnetic configurations and symmetry breaking phases.
- Analyzed the relationship between magnetic structure, symmetry, and quantum geometry effects.
Main Results:
- Reported a tuneable, strong room-temperature second-harmonic transport response in TbMn6Sn6.
- Demonstrated that magnetic fields can control magnetic configurations and symmetry breaking phases near room temperature.
- Showcased the governance of the observed response by the quantum metric.
Conclusions:
- Manipulation of magnetic structure symmetries offers an effective route for tuneable quantum-geometry-based devices.
- Room-temperature operation of quantum geometry effects is achievable in quantum magnets.
- TbMn6Sn6 is a promising material for practical nonlinear electronic devices leveraging quantum geometry.
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