Related Experiment Video
Updated: Sep 13, 2025

Synthesis of Metal Nanoparticles Supported on Carbon Nanotube with Doped Co and N Atoms and its Catalytic Applications in Hydrogen Production
Published on: December 6, 2021
Constructing Sulfur Vacancy-Rich NiCo2S4@MoS2 Core@shell Heterostructure via Interface Engineering for Enhanced HER
Ziteng Song1, Yuan Liu1, Peng Yin1
1Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
Abstract:
The rational design of heterointerfaces with optimized charge dynamics and defect engineering remains pivotal for developing advanced non-noble metal-based electrocatalysts for water splitting. A comparative study of NiCo2S4-MoS2 heterostructures was conducted to elucidate the impact of interfacial architecture and defect engineering on hydrogen evolution reaction (HER) performance. A core@shell NiCo2S4@MoS2 heterostructure was synthesized via a facile hydrothermal growth method, inducing lattice distortion and strong interfacial coupling, while supported NiCo2S4/MoS2 heterostructures were prepared by ultrasonic-assisted deposition. A detailed structural and spectroscopic characterization and theoretical calculation demonstrated that the core@shell configuration promotes charge redistribution across the NiCo2S4-MoS2 interface and generates abundant sulfur vacancies, thereby increasing the density of electroactive sites. Electrochemical measurements reveal that NiCo2S4@MoS2 markedly outperforms the supported heterostructure, single-component NiCo2S4, and MoS2 when serving as the HER catalyst in acid solution. These findings establish a dual-optimization strategy-combining interfacial design with vacancy modulation-that provides a generalizable paradigm for the deliberate design of high-efficiency non-noble metal-based electrocatalysts for water splitting reactions.
Related Concept Videos
Interfacial Electrochemical Methods: Overview
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Preparation and Reactions of Sulfides

