Photo-Scanning Capacitance Microscopy and Spectroscopy Study of Epitaxial GaAsN Layers and GaAsN P-I-N Solar Cell...

This work presents a novel approach to investigating epitaxial GaAsN layers and GaAsN-based p-i-n solar cell structures using light-assisted scanning capacitance microscopy (SCM) and spectroscopy. Due to the technological challenges in growing high-quality GaAsN with controlled nitrogen incorporation, the epitaxial layers often exhibit inhomogeneity in their opto-electrical properties. By combining localized cross-section SCM measurements with wavelength-tunable optical excitation (800-1600 nm), we resolved carrier concentration profiles, internal electric fields, and deep-level transitions across the device structure at a nanoscale resolution. A comparative analysis between electrochemical capacitance-voltage (EC-V) profiling and photoluminescence spectroscopy confirmed multiple localized transitions, attributed to compositional fluctuations and nitrogen-induced defects within GaAsN. The SCM method revealed spatial variations in energy states, including discrete nitrogen-rich regions and gradual variations in the nitrogen content throughout the layer depth, which are not recognizable using standard characterization methods. Our results demonstrate the unique capability of the photo-scanning capacitance microscopy and spectroscopy technique to provide spatially resolved insights into complex dilute nitride structures, offering a universal and accessible tool for semiconductor structures and optoelectronic devices evaluation.