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High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as
Lingzhi Jin1, Wenjuan Xu2, Yangzhou Qian1
1School of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Nanomaterials (Basel, Switzerland)
|July 25, 2025
Summary
Researchers developed organic nonvolatile transistor memories (ONVMs) using a novel SFDBAO/polystyrene blend. This material shows superior charge trapping for high-performance, multi-level data storage in advanced electronic devices.
Area of Science:
- Materials Science
- Organic Electronics
- Solid-State Physics
Background:
- Organic nonvolatile transistor memories (ONVMs) are crucial for next-generation electronics.
- Developing efficient charge storage elements is key to improving ONVM performance.
Purpose of the Study:
- To fabricate and characterize ONVMs using a hybrid spiro[fluorene-9,7'-dibenzo[c,h]acridine]-5'-one (SFDBAO)/polystyrene (PS) film.
- To evaluate the charge trapping ability and memory characteristics of SFDBAO-based ONVMs.
Main Methods:
- Fabrication of ONVMs utilizing a bulk-heterojunction-like tunneling and trapping layer composed of SFDBAO and PS.
- Comprehensive characterization of the ONVMs, including memory window, switching speed, retention time, and reversibility.
Main Results:
- The SFDBAO/PS blend demonstrated superior charge trapping compared to C60 and Alq3.
- ONVMs exhibited ambipolar memory behavior with a wide memory window (146 V), fast switching (20 ms), and excellent retention (>5x10^4 s).
- Stable reversibility (36 cycles) and reliable four-level data storage were achieved.
Conclusions:
- The SFDBAO/PS hybrid system acts as an effective molecular-scale charge storage element.
- The strategic design of bulk-heterojunction-like tunneling and trapping elements shows great promise for high-performance ambipolar ONVMs.
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