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Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE.

Adriana Rodrigues¹, Anagha Kamath¹, Hannah-Sophie Illner¹

¹Institut für Physik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany.

Nanomaterials (Basel, Switzerland)

|July 25, 2025

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We demonstrate GaAs nanoheteroepitaxy on silicon nanotips, enabling monolithic integration for advanced optoelectronic devices. Growth conditions influence island size, structure, and twinning, crucial for CMOS-compatible nanophotonics.

Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Monolithic integration of III-V semiconductors with silicon (Si) is essential for next-generation optoelectronic and photonic devices.
Current integration methods face challenges in achieving high-quality, defect-free interfaces.

Purpose of the Study:

To investigate the selective growth of Gallium Arsenide (GaAs) nanoislands on silicon (Si) nanotips using gas-source molecular beam epitaxy (GS-MBE).
To understand the impact of growth conditions on the morphology, crystalline structure, and defect formation of GaAs nanoislands.
To explore the potential for CMOS-compatible Si-based nanophotonic technologies.

Main Methods:

Fabrication of complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers.

Keywords:

Si photonics defects epitaxial GaAs on Si nanoheteroepitaxy

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Gas-source molecular beam epitaxy (GS-MBE) for GaAs nanoheteroepitaxy (NHE).

Characterization using scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and photoluminescence (PL) spectroscopy.

Main Results:

Achieved selective growth of fully relaxed GaAs nanoislands on Si nanotips with monomodal size distribution (100-280 nm effective diameter) for lower deposition.
Observed four distinct facet orientations ({001} planes) in smaller islands.
Identified a transition to bimodal size distribution and increased twinning volume fraction with higher deposition, alongside the emergence of larger islands with multiple crystallographic facets.

Conclusions:

Growth conditions significantly influence GaAs nanoisland morphology, crystalline structure, and defect formation during NHE on Si nanotips.
Twinning is consistently observed, with its prevalence increasing with deposition.
The findings provide critical insights into nanoheteroepitaxial growth dynamics, paving the way for advanced CMOS-compatible Si-based nanophotonic devices.