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Controlled Synthesis of Tellurium Nanowires and Performance Optimization of Thin-Film Transistors via Percolation
Mose Park1, Zhiyi Lyu2, Seung Hyun Song3
1Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Abstract:
In this study, we propose a method for systematic nanowire length control through the precise control of the polyvinylpyrrolidone (PVP) concentration during the synthesis of tellurium nanowires. Furthermore, we report the changes in the electrical properties of thin-film transistor (TFT) devices with different lengths of synthesized tellurium nanowires used as channels. Through the use of scanning electron microscopy (SEM) and atomic force microscopy (AFM), it was determined that the length of the wires increased in relation to the amount of PVP incorporated, while the diameter remained consistent. The synthesized long wires formed a well-connected percolation network with a junction density of 4.6 junctions/µm2, which enabled the fabrication of devices with excellent electrical properties, the highest on/off ratio of 103, and charge mobility of 1.1 cm2/V·s. In contrast, wires with comparatively reduced PVP content demonstrated a junction density of 2.1 junctions/µm2, exhibiting a lower on/off ratio and reduced charge mobility. These results provide guidance on how the amount of PVP added during wire growth affects the length of the synthesized wires and how it affects the connectivity between the wires when they form a network, which may help optimize the performance of high-performance nanoelectronic devices.
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