Investigation of Thermoelectric Properties in Altermagnet RuO₂

An altermagnet, characterized by its distinctive magnetic properties, may hold potential applications in diverse fields such as magnetic materials, spintronics, data storage, and quantum computing. As a prototypical altermagnet, RuO₂ exhibits spin polarization and demonstrates the advantageous characteristics of high electrical conductivity and low thermal conductivity. These exceptional properties endow it with considerable promise in the emerging field of thermal spintronics. We studied the electronic structure and thermoelectric properties of RuO₂; the constructed RuO₂/TiO₂/RuO₂ all-antiferromagnetic tunnel junction (AFMTJ) exhibited thermally induced magnetoresistance (TIMR), reaching a maximum TIMR of 1756% at a temperature gradient of 5 K. Compared with prior studies on RuO₂-based antiferromagnetic tunnel junctions, the novelty of this work lies in the thermally induced magnetoresistance based on its superior thermoelectric properties. In parallel structures, the spin-down current dominates the transmission spectrum, whereas in antiparallel structures, the spin-up current governs the transmission spectrum, underscoring the spin-polarized thermal transport. In addition, thermoelectric efficiency emphasizes the potential of RuO₂ to link antiferromagnetic robustness with ferromagnetic spin functionality. These findings promote the development of efficient spintronic devices and spin-based storage technology for waste heat recovery and emphasize the role of spin splitting in zero-magnetization systems.