Related Experiment Video
Updated: Sep 13, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Interfacial doping engineering on electronic states and electrical properties of MoS2/Au contact
1School of Energy Engineering, Yulin University, Yulin, 719000, China. 108502786@qq.com.
Abstract:
We conducted a thorough investigation using first - principle calculations, focusing on nonmetallic dopants, including Be, B, C, N, O, and F doped MoS2/Au contacts. Our analysis revolved around critical parameters, including adhesion strength, charge transfer across the interface, tunnel barrier, and Schottky barrier height (SBH). our study demonstrated that substitutionally doped interfaces can improve contact properties while maintaining an enhanced adhesion strength. Specifically, The tunneling probability TB is high to 37.81% and the negative n-type SBH is formed for F doped MoS2/Au contact. This finding marks a departure from existing methods and offers a promising avenue for inducing Ohmic contact and addressing contact resistance challenges in TMDs.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Interfacial Electrochemical Methods: Overview
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

