Related Experiment Video
Updated: Jul 5, 2026

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition
Published on: February 27, 2013
Design and Fabrication of Antireflective Coatings with Enhanced Transmittance and High Laser-Induced Damage Threshold
Liqin Liu1,2, Hui Sun1,3,4, Zhanglin Huang1
1College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China.
Abstract:
Zinc germanium phosphide (ZnGeP2, ZGP), a key mid-infrared nonlinear crystal for optical parametric oscillation (OPO) applications, suffers from limited transmittance (∼60%) at pump (2090 nm) and generated (3600-4800 nm) wavelengths, hindering high-energy laser applications. This study overcomes this limitation by designing and experimentally validating highly effective antireflective coatings (ARCs) using Ta2O5/SiO2 multilayers. An optimized Air|(1.44L/1.32H)|ZGP|(1.32H/1.44L)|Air structure exhibited three key improvements: (1) Simulated average transmittance >99% across both bands; (2) Minimized electric field intensity at critical interfaces, enhancing the laser-induced damage threshold (LIDT); (3) The design exhibits excellent thickness tolerance, maintaining >94% transmittance in the case of -45 nm to +50 nm film thickness variation, facilitating reliable fabrication via magnetron sputtering deposition. Fabricated coatings demonstrated outstanding performance: 97.0% transmittance at 2090 nm and 96.3% average across 3600-4800 nm─a ∼66% relative improvement over bare ZGP. Furthermore, under high-frequency laser irradiation conditions (16 kHz, 2090 nm), the LIDT of the coated sample reached at least 1.39 J/cm2, demonstrating robust durability in demanding operational environments. This ARC solution effectively addresses the critical limitations of ZGP crystals while maintaining compatibility with high-frequency laser operation requirements.
More Related Videos
08:18Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
Published on: October 3, 2015
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Related Concept Videos
Ischemic Stroke l: Introduction
Ischemic Stroke ll: Pathophysiology
Transient Ischemic Attack l: Introduction