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Updated: Sep 13, 2025

Accumulation and Analysis of Cuprous Ions in a Copper Sulfate Plating Solution
Published on: March 20, 2019
CuCl as a Mg2+ reservoir for in situ interface layer engineering and highly stable Mg plating/stripping
Yuanxiang Zhang1, Tianlong Huang1, Maosheng Cui1
1School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, Jiangsu, China.
None:
Although rechargeable magnesium batteries (RMBs) represent a promising post‑lithium energy storage technology, the formation of a non-conductive Mg2+ passivation layer on Mg anodes remains a significant challenge. Here, we develop a novel all-inorganic electrolyte with low overpotential for Mg plating/stripping by introducing electrochemical active CuCl into a MgCl2/THF solution (MgCl2-CuCl/THF). During cycling, a multi-functional interface layer composed of Cu and CuxMgyClz is formed in situ on the Mg anode surface, which not only promotes MgCl2 salt dissociation but also offer rapid-electron transport pathways. Moreover, the Cu+ with reversible redox nature in CuxMgyClz can accommodate and release Mg2+ ions, thereby facilitating rapid and homogenous Mg2+ deposition. Consequently, the optimized MgCl2-CuCl/THF electrolyte enables Mg//Mg symmetric cells to cycle stably for over 1300 h at 0.5 mA cm-2, with an overpotential as low as 0.15 V (vs. Mg2+/Mg). Furthermore, excellent Mg electro-plating/stripping properties have also been demonstrated in Mg//Mo, Mg//Cu, and Mg//SS asymmetric cells, achieving nearly 100 % Coulombic efficiency and stable cycling for over 138, 138, and 55 days, respectively. This work provides a promising strategy for the design of high-performance electrolyte systems for advanced RMBs.
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