Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe₃GaTe₂

Efficiently manipulating the magnetization of van der Waals (vdW) ferromagnets has attracted considerable interest in developing room-temperature two-dimensional (2D) material-based memory and logic devices. Here, taking advantage of the unique properties of the vdW ferromagnet as well as promising characteristics of the orbital Hall effect, we demonstrate the room-temperature magnetization switching of vdW ferromagnet Fe₃GaTe₂ through the orbital torque generated by the orbital Hall material, Titanium (Ti). The switching current density is estimated to be around 1.6×10⁶A/cm², comparable to that achieved in Fe₃GaTe₂ using spin-orbit torque from spin Hall materials (e.g., WTe₂, and TaIrTe₄). The efficient magnetization switching arises from the combined effects of the large orbital Hall conductivity of Ti and the strong spin-orbit correlation of the Fe₃GaTe₂, as confirmed through theoretical calculations. Our findings advance the understanding of orbital torque switching and pave the way for exploring 2D material-based orbitronic devices.