Benzocyclobutenyl Silicone-Acrylic Resin: A Photo/Thermal Curing Hybrid Structure for High-Performance Photoimageable...

Advancements in integrated circuit technology have heightened the importance of photoresist materials with superior dielectric properties, thermal stability, and patterning precision. Although traditional acrylic resins exhibit excellent photo-curing characteristics, their high dielectric constants, limited thermal stability, and hygroscopic nature restrict their utility in semiconductor applications. In this study, 4-acryloylbenzocyclobutene (BCB-V-COOH) was synthesized via a Heck reaction between 4-bromobenzocyclobutene and acrylic acid. Subsequently, BCB-V-COOH was copolymerized with bisbenzocyclobutene-bis-divinylsiloxane (DVS-b-BCB) at varying ratios to produce the oligomer BCB-SO-COOH. These oligomers were then graft-modified with glycidyl methacrylate to yield BSA Resin, which was blended with the photoinitiator to formulate photoresists. The structures of the BSA Resins were characterized using proton nuclear magnetic resonance (¹H NMR) and Fourier transform infrared (FTIR) spectroscopy. Studies on the photo-thermal curing kinetics revealed that the acrylate double bonds rapidly crosslinked under 365 nm UV irradiation, while the BCB moieties formed crosslinked networks via a ring-opening mechanism during thermal curing. The incorporation of BCB significantly enhanced the thermal stability and dielectric properties of the BSA Resins. Moreover, the BSA Resin achieved a patterning resolution of 10 µm with exceptional dimensional stability. Therefore, this work demonstrates the promising potential of BSA Resin for applications in microelectronic packaging.