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Related Experiment Video

Updated: Sep 13, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Ferroelectric Domain Walls for Environmental Sensors.

Leonie Richarz¹, Ida Cathrine Skogvoll¹, Egil Ytterli Tokle¹

¹Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.

ACS Applied Materials & Interfaces

|August 4, 2025

Summary

Ferroelectric domain walls in Er(Mn,Ti)O3 can switch between insulating and conducting states in response to atmospheric changes. This environmental sensitivity enables novel applications in domain wall nanoelectronics and sensor technology.

Keywords:

domain-wall-based nanoelectronics environmental sensors ferroelectric domain walls oxygen defects scanning probe microscopy

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Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Ferroelectric domain walls are promising for next-generation nanotechnology.
Their quasi-two-dimensional nature and unique electronic properties enable nanoscale electronic components.

Purpose of the Study:

To demonstrate atmosphere-related reversible changes in electronic conduction at ferroelectric domain walls.
To explore the potential of these domain walls for environmental sensing applications.

Main Methods:

Investigated neutral ferroelectric domain walls in Er(Mn,Ti)O3.
Exposed the material to reducing and oxidizing atmospheric conditions.
Performed density functional theory (DFT) calculations.

Main Results:

Achieved reversible switching of domain wall conductivity (insulating to conducting and vice versa) by altering atmospheric conditions.
Observed that environmental changes are translated into measurable current signals.
DFT calculations revealed that oxygen interstitial accumulation modulates charge carrier density.

Conclusions:

Demonstrated a novel mechanism for controlling ferroelectric domain wall electronic properties via atmospheric changes.
Introduced an innovative concept for developing domain wall-based environmental sensors.
Expanded the possibilities within domain wall nanoelectronics and general sensor technology.