Defect Engineering toward High-Performance Tin-Based Perovskite Field-Effect Transistors

Area of Science:

• Materials Science
• Solid-State Physics
• Device Engineering

Background:

• Tin (Sn)-based perovskite field-effect transistors (FETs) are promising for electronics and optoelectronics.
• Defects like Sn vacancies and oxidation degrade film quality and device performance.
• These defects hinder charge transport, ion migration, and stability in thin perovskite films.

Purpose of the Study:

• To provide a comprehensive overview of defect properties and origins in Sn-based perovskite FETs.
• To summarize advanced defect passivation strategies for improving device performance.
• To discuss challenges and future prospects for high-performance Sn-based perovskite FETs.

Main Methods:

• Review of defect properties and their influence on Sn-based perovskite FETs.
• Systematic summary of defect passivation strategies: compositional engineering, dopant modification, dimensional engineering, interface passivation, and crystallization regulation.
• Analysis of existing challenges and future research directions.

Main Results:

• Defects, primarily at surfaces and grain boundaries, significantly impact charge transport, ion migration, and structural stability.
• Various defect passivation strategies can mitigate these issues.
• Understanding and engineering defects are crucial for advancing Sn-based perovskite FET technology.

Conclusions:

• Defect engineering is key to overcoming limitations in Sn-based perovskite FETs.
• Advanced passivation techniques offer pathways to enhanced device performance.
• Further research is needed to address challenges for large-scale integration.