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Related Experiment Video

Updated: Sep 12, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

Multiple Hall Effects in Antiferromagnetic-Ferroelectric Heterostructures.

Xiu-Cai Jiang¹, Miao-Miao Li¹, Yu-Zhong Zhang¹

¹School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China.

|August 8, 2025

Summary

Controlling Hall effects in 2D antiferromagnets is achieved by manipulating ferroelectric layers. This enables tunable layer Hall, layer spin Hall, and valley layer spin Hall effects in novel heterostructures.

Keywords:

PT symmetry antiferromagnetic−ferroelectric heterostructure first-principles calculations layertronics and valleytronics multiple Hall effects

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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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Published on: January 21, 2016

Area of Science:

Condensed Matter Physics
Materials Science
Spintronics

Background:

Hall effects are vital for spintronics, valleytronics, and layertronics.
Controlling these effects in 2D antiferromagnets presents significant challenges.

Purpose of the Study:

To propose a novel mechanism for controllable Hall effects in 2D antiferromagnets.
To investigate the manipulation of Hall effects via ferroelectric polarization.

Main Methods:

Tight-binding model analysis.
First-principles calculations.
Investigation of $P T$ symmetry breaking and band shifts.

Main Results:

Selective reversal of ferroelectric polarization induces transitions between distinct Hall effects.
Demonstrated control over layer Hall, layer spin Hall, and valley layer spin Hall effects.
Verified feasibility in Al₂S₃/bilayer 2H-FeBr₂/Al₂S₃ heterostructures.

Conclusions:

A new pathway for manipulating Hall effects in layered antiferromagnets is established.
Ferroelectric control offers a promising route for advanced spintronic devices.
The proposed mechanism provides a foundation for future research in tunable electronic properties.