You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Sep 12, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Shuang Xu1, Kai Wang2, Honglin Yan1
1School of Aerospace Engineering, Xiamen University, Xiamen 361005, PR China.
This study introduces a new method using local defect resonance (LDR) and a genetic algorithm to accurately measure circular defect size and depth in structures. This advances nondestructive evaluation (NDE) for complex designs.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: