Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Half wave rectifier01:20

Half wave rectifier

1.6K
A half-wave rectifier is a fundamental circuit in electronics, designed to convert alternating current (AC) voltage into a unidirectional voltage. It utilizes the simplest form of diode rectification, where the circuit comprises a single diode in series with a load resistor and an AC power source.
1.6K
Bridge rectifier01:24

Bridge rectifier

823
The bridge rectifier is essential in electronics for efficiently converting alternating current (AC) to direct current (DC). Comprised of four diodes configured in a bridge layout, this rectifier effectively processes both the positive and negative halves of the AC waveform, making it superior to half-wave and full-wave center-tapped rectifiers in terms of voltage regulation and output stability.
Operationally, the bridge rectifier allows current flow through two of its diodes during each...
823
Full wave rectifier01:22

Full wave rectifier

1.8K
A full-wave rectifier is a device that converts alternating current (AC) to direct current (DC) and is more efficient than its half-wave counterpart. It typically includes a center-tapped transformer, two diodes, and a load resistor. The secondary winding of the transformer is divided to provide two equal voltages of opposite polarities, which is the pivotal element of full-wave rectification.
1.8K
The Hall Effect01:30

The Hall Effect

2.7K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
2.7K
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

854
A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
854
P-N junction01:11

P-N junction

681
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
681

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Room-Temperature Intrinsic Nonlinear Planar Hall Effect in TaIrTe_{4}.

Physical review letters·2026
Same author

Interlayer Self-Doping Multiferroics.

Physical review letters·2026
Same author

Unconventional Room-Temperature Antisymmetric Magnetoresistance in van der Waals Fe<sub>3</sub>GaTe<sub>2</sub>/Pt Heterostructures.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Opto-optical edge defect mitigation in solution-processed WSe<sub>2</sub> thin films for high-efficiency optical modulation.

Nature communications·2026
Same author

Excitonic Shift Current in Monolayer MoS<sub>2</sub>.

ACS nano·2026
Same author

Unconventional Zero-Field-Cooling Exchange Bias in 2D Van der Waals Magnetic Heterostructures.

Nano letters·2026
Same journal

Near-exceptional point degeneracy enables multilevel optical memory.

Nature nanotechnology·2026
Same journal

Monolithic manufacturing of an electrically addressable quasi-suspended nanophotonic aperture.

Nature nanotechnology·2026
Same journal

Halide-site-substituting spacer creates quasi-two-dimensional perovskites for vapour-deposited light-emitting diodes.

Nature nanotechnology·2026
Same journal

Nanoscale amorphization of poly(triarylamine) for efficient and stable inverted perovskite photovoltaics.

Nature nanotechnology·2026
Same journal

Bridging nanotechnology and mechanobiology.

Nature nanotechnology·2026
Same journal

Coherent 2D/3D van der Waals epitaxy enables single-crystal perovskite heterostructures.

Nature nanotechnology·2026
See all related articles

Related Experiment Video

Updated: Sep 11, 2025

Implementation of a Nonlinear Microscope Based on Stimulated Raman Scattering
09:13

Implementation of a Nonlinear Microscope Based on Stimulated Raman Scattering

Published on: July 6, 2019

7.7K

Ultrabroadband nonlinear Hall rectifier using SnTe.

Fanrui Hu1, Pengnan Zhao2, Lihuan Yang2

  • 1Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.

Nature Nanotechnology
|August 11, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed an ultrabroadband, zero-bias rectifier using the nonlinear Hall effect in topological crystalline insulator SnTe thin films. This technology enables efficient energy harvesting for self-powered electronics across vast radio frequencies.

More Related Videos

High-precision Electromagnetic Flowmeter with Empty Pipe Detection via Complex Programmable Logic Device-based Waveform Recognition
05:11

High-precision Electromagnetic Flowmeter with Empty Pipe Detection via Complex Programmable Logic Device-based Waveform Recognition

Published on: June 27, 2025

212
Optimization, Test and Diagnostics of Miniaturized Hall Thrusters
12:22

Optimization, Test and Diagnostics of Miniaturized Hall Thrusters

Published on: February 16, 2019

9.1K

Related Experiment Videos

Last Updated: Sep 11, 2025

Implementation of a Nonlinear Microscope Based on Stimulated Raman Scattering
09:13

Implementation of a Nonlinear Microscope Based on Stimulated Raman Scattering

Published on: July 6, 2019

7.7K
High-precision Electromagnetic Flowmeter with Empty Pipe Detection via Complex Programmable Logic Device-based Waveform Recognition
05:11

High-precision Electromagnetic Flowmeter with Empty Pipe Detection via Complex Programmable Logic Device-based Waveform Recognition

Published on: June 27, 2025

212
Optimization, Test and Diagnostics of Miniaturized Hall Thrusters
12:22

Optimization, Test and Diagnostics of Miniaturized Hall Thrusters

Published on: February 16, 2019

9.1K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Electrical Engineering

Background:

  • The proliferation of self-powered electronics in IoT and 6G communication necessitates rectifiers with ultrabroadband frequency operation and low input power sensitivity.
  • Conventional semiconductor junction rectifiers are limited by parasitic capacitance and threshold voltages, hindering performance under ambient radio-frequency conditions.

Purpose of the Study:

  • To introduce a novel ultrabroadband, zero-bias rectifier.
  • To leverage the nonlinear Hall effect in topological crystalline insulators for enhanced rectification capabilities.

Main Methods:

  • Fabrication of wafer-scale (001)-oriented topological crystalline insulator SnTe thin films.
  • Characterization of the nonlinear Hall effect, including second-order conductivity measurements.
  • Experimental validation of rectification performance across a wide frequency spectrum (23 MHz to 1 THz).

Main Results:

  • SnTe thin films exhibit a large second-order conductivity (~0.004 Ω⁻¹ V⁻¹), attributed to a Berry curvature dipole.
  • The developed rectifier operates from 23 MHz to 1 THz with high sensitivity (down to -60 dBm) without external bias.
  • Demonstrated wireless powering of a thermistor using harvested radio-frequency energy.

Conclusions:

  • The nonlinear Hall effect in SnTe offers a promising pathway for developing efficient, ultrabroadband rectifiers.
  • This technology has significant potential for next-generation energy-autonomous microsystems and rectenna applications.
  • The findings pave the way for advanced self-powered electronic devices operating under diverse RF conditions.