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Reducing dose sensitivity in high-numerical-aperture extreme ultraviolet lithography using an innovative source

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Summary

This summary is machine-generated.

This study introduces a novel source optimization method for high-numerical-aperture extreme ultraviolet lithography (high-NA EUVL) systems. The technique enhances imaging stability and extends the process window by minimizing dose variation effects.

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Area of Science:

Semiconductor Manufacturing
Optical Lithography
Metrology

Background:

Illumination non-uniformity and system drift in scanning systems cause dose variations.
These variations degrade imaging performance and wafer-wide consistency in high-NA EUVL.

Purpose of the Study:

To propose a novel source optimization (SO) method for high-NA EUVL systems.
To reduce the impact of dose variation on critical dimension error (CDE).
To increase the exposure latitude (EL) and process window (PW).

Main Methods:

Developed a dose sensitivity function.
Integrated the dose sensitivity function into the SO cost function.
Conducted simulations to validate the method's effectiveness.

Main Results:

The proposed SO method significantly improves imaging performance stability under dose non-uniformity.
Demonstrated a reduction in the influence of dose variation on CDE.
Showcased an extension of the process window (PW).

Conclusions:

The novel SO method effectively enhances robustness against dose variations in high-NA EUVL.
This approach is crucial for improving yield and reliability in advanced semiconductor manufacturing.
The method offers a pathway to more stable and predictable lithography outcomes.