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    Accurate thin-film thickness measurement using coherence scanning interferometry (CSI) depends on precise prior information. The refractive index is the most critical factor, with small deviations significantly impacting silicon dioxide film thickness accuracy.

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    Area of Science:

    • Materials Science
    • Optical Metrology
    • Semiconductor Manufacturing

    Background:

    • Silicon dioxide (SiO2) films are essential in semiconductor fabrication for barrier, insulating, and protective functions.
    • Coherence scanning interferometry (CSI) provides high-resolution, large-field-of-view thin-film thickness measurements.
    • Model-based CSI is used for films thinner than the system's coherence length, requiring prior information.

    Purpose of the Study:

    • To quantitatively analyze the impact of prior information accuracy on model-based CSI thickness measurements.
    • To identify and rank the sensitivity of CSI measurements to various influencing factors.

    Main Methods:

    • Quantitative analysis combining simulation and experimental approaches.
    • Investigation of influence factors: camera noise, numerical aperture (NA), pupil apodization, light source spectrum, and thin-film refractive index.
    • Analysis of SiO2/Si thin films with varying thicknesses.

    Main Results:

    • Measurement accuracy is variably sensitive to different prior information parameters.
    • Thin-film refractive index is the most sensitive factor; a 1% deviation causes a ~1% relative thickness error.
    • A 5% deviation in numerical aperture (NA) results in less than a 1% relative thickness error.

    Conclusions:

    • Accurate prior knowledge of the thin-film refractive index is crucial for precise CSI thickness measurements.
    • Understanding factor sensitivities allows for optimization of CSI methods in semiconductor manufacturing.
    • Simulation and experimental results demonstrate good agreement, validating the findings.