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Related Experiment Video

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Fabricating Reactive Surfaces with Brush-like and Crosslinked Films of Azlactone-Functionalized Block Co-Polymers

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Fast lithographic thick-mask model using overlapped patch matching.

Sheng Liu, Xu Ma

|August 12, 2025

Summary

This summary is machine-generated.

A new fast diffraction transfer matrix (F-DTM) model improves thick-mask modeling for deep ultraviolet lithography. This learning-based approach enhances accuracy and computational efficiency in advanced semiconductor manufacturing simulations.

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Area of Science:

Semiconductor Manufacturing
Computational Lithography
Optics and Photonics

Background:

Accurate modeling of thick-mask effects is crucial for lithography simulations at advanced technology nodes.
Traditional models face challenges in balancing accuracy and computational speed for complex mask patterns.

Purpose of the Study:

To propose a fast and accurate learning-based thick-mask model for deep ultraviolet (DUV) lithography.
To address the limitations of existing models in simulating thick-mask effects at advanced technology nodes.

Main Methods:

Decomposition of the mask pattern into overlapped patches.
Pre-calibration of diffraction transfer matrices (DTMs) to map mask features to near-fields.
Implementation of an acceleration technique to enhance computational efficiency.

Main Results:

The overlapping decomposition effectively mitigates crack effects at boundaries, reducing model errors.
The acceleration technique significantly improves the computational speed of DTM calibration.
The F-DTM model demonstrates improved calculation accuracy and efficiency over traditional thick-mask models.

Conclusions:

The proposed fast diffraction transfer matrix (F-DTM) model offers a viable solution for accurate and efficient thick-mask effect modeling in DUV lithography.
This approach enhances simulation capabilities for advanced semiconductor manufacturing processes.
The method provides a breakthrough in overcoming speed bottlenecks for model calibration.