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Source optimization method employing dynamic polarization aberration model for high-NA EUVL.

Zhaoxuan Li, Miao Yuan, Zhen Li

    Applied Optics
    |August 12, 2025
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a dynamic polarization aberration model for extreme ultraviolet lithography (EUVL) scanning systems. This new model improves image quality and reduces pattern errors in high numerical aperture EUVL systems.

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    Area of Science:

    • Optical Engineering
    • Semiconductor Manufacturing
    • Computational Lithography

    Background:

    • Scanning lithography systems are susceptible to polarization aberrations (PAs) that vary with position in the field of view (FOV).
    • Existing computational lithography models for extreme ultraviolet lithography (EUVL) often overlook these dynamic PAs, impacting imaging accuracy, especially in high numerical aperture (NA) systems.
    • This oversight leads to suboptimal optimization results and reduced image quality in advanced EUVL applications.

    Purpose of the Study:

    • To develop a dynamic polarization aberration (PA) model specifically for NA0.55 EUVL systems.
    • To propose and validate a source optimization (SO) method that incorporates this dynamic PA model to enhance imaging quality.
    • To address the limitations of current models that neglect scanning-induced polarization variations.

    Main Methods:

    • Established a dynamic PA model for NA0.55 EUVL by sampling FOV points along the scanning direction.
    • Calculated lithographic images at different sampling points, accounting for the impact of PAs at each point.
    • Implemented an iterative exposure simulation of the resist, integrating the dynamic PA model.
    • Developed a source optimization strategy based on the dynamic PA model.

    Main Results:

    • The proposed source optimization (SO) method effectively reduced pattern errors by 15.5% to 28.2%.
    • The process window was significantly expanded by 15.0% to 22.2% through the implemented SO strategy.
    • Experimental validation confirmed the efficacy of the dynamic PA model in improving lithographic outcomes.

    Conclusions:

    • Dynamic polarization aberrations significantly affect imaging quality in scanning EUVL systems, particularly at high NA.
    • The developed dynamic PA model and subsequent source optimization method offer a practical solution to mitigate these effects.
    • This approach enhances pattern fidelity and process robustness, crucial for advanced semiconductor manufacturing.