Simplification of the Fermi-Löwdin Self-Interaction Correction Method for Efficient Self-Interaction-Free Density...

Fermi-Löwdin orbital self-interaction-correction (FLOSIC) method uses symmetric orthogonalized Fermi orbitals as localized orbitals in one-electron SIC schemes. In FLOSIC, a set of Fermi orbital descriptors (FOD) defines the FLOs and is obtained by energy minimization. Determination of optimal FODs is a computationally very demanding task. Herein, simplification of the FLOSIC calculations by removing self-interaction error from a set of selected orbitals of interest (SOSIC) is proposed. This approach is illustrated by choosing a set of valence orbitals as active orbitals. The results of a wide range of properties obtained using the valence SOSIC (vSOSIC) scheme are compared against the Perdew-Zunger SIC results. The two methods agree within a few percent for the majority of the properties. The mean absolute error in the vertical detachment energy of water cluster anions with vSOSIC-Perdew-Burke-Ernzerhof (PBE) against benchmark CCSD(T) results is only 15 meV making vSOSIC-PBE an excellent alternative to the CCSD(T) for the case. The calculation on the [Cu ${}_2$ Cl ${}_6$ ]^2- complex demonstrates that the FOD optimization in vSOSIC is substantially smoother and faster. Assessment of the performance of SIC-r ${}^2$ SCAN shows that it performs similarly to the SIC-Strongly Constrained and Appropriately Normed functional (SCAN) for most properties, but for atomization energies, SIC-r ${}^2$ SCAN outperforms SIC-SCAN.