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High-throughput micro-scale bandgap mapping for perovskite-inspired materials with complex composition space.

Fang Sheng¹, Kangyu Ji^2,3, Linjie Dai^4,5

¹Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. shengf1227@gmail.com.

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|August 12, 2025

Summary

This study introduces a hyperspectral imaging technique for rapid material characterization. It reveals complex bandgap variations and phase separation in perovskite-inspired materials, crucial for high-throughput optoelectronics research.

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Area of Science:

Materials Science
Spectroscopy
Optoelectronics

Background:

High-throughput experimental workflows require characterization techniques that match synthesis rates.
Contactless optical methods are increasingly important for rapid material property assessment.
Understanding compositional effects on optoelectronic properties is key for material development.

Purpose of the Study:

To develop and demonstrate a hyperspectral imaging method for measuring local optical bandgap distributions.
To analyze the compositional space of Cs3(BixSb1-x)2(BryI1-y)9 perovskite-inspired materials.
To correlate optical bandgap measurements with carrier dynamics and material homogeneity.

Main Methods:

Utilized hyperspectral imaging with spatially-resolved reflectance spectra for bandgap mapping.
Collected approximately one million optical bandgap data points across a wide compositional range.
Employed high-throughput transient absorption spectroscopy to investigate carrier dynamics.

Main Results:

Observed non-monotonic bandgap variations (bandgap bowing) and identified samples with multiple bandgaps.
Transient absorption spectroscopy confirmed discrete energy levels and independent carrier dynamics, indicating phase separation.
Demonstrated the capability to rapidly assess material quality and homogeneity.

Conclusions:

Hyperspectral imaging is a powerful tool for high-throughput characterization of optoelectronic materials.
The study highlights phase separation as a critical factor influencing the properties of Cs3(BixSb1-x)2(BryI1-y)9 materials.
This approach supports efficient screening and optimization of novel optoelectronic material candidates.