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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

478
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Broadband four-mode (de)multiplexer based on MMI using subwavelength grating structure.

Renxuan Liu, Jin Wang, Guohua Hu

    Optics Express
    |August 13, 2025
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    Summary

    We developed a novel broadband four-mode (de)multiplexer for mode-division multiplexing (MDM) systems. This device uses subwavelength gratings and beam shaping to significantly enhance optical interconnect capacity.

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    Area of Science:

    • Photonics
    • Optical Engineering
    • Integrated Optics

    Background:

    • Mode-division multiplexing (MDM) is crucial for enhancing optical interconnect transmission capacity.
    • Existing mode (de)multiplexers face bandwidth limitations due to waveguide dispersion.
    • Subwavelength gratings (SWG) offer potential for improved optical device performance.

    Purpose of the Study:

    • To present a novel broadband four-mode (de)multiplexer for on-chip MDM systems.
    • To overcome the bandwidth limitations of conventional mode (de)multiplexers.
    • To enable significant capacity enhancement in photonic integrated circuits.

    Main Methods:

    • The device combines subwavelength grating (SWG) technology with beam shaping techniques.
    • It utilizes SWG-based multimode interference couplers (2x2 MMI and 4x4 MMI) and passive phase shifters.
    • Beam shaping is achieved through Y-junctions, mitigating wavelength sensitivity from group-velocity dispersion (GVD).

    Main Results:

    • The proposed (de)multiplexer demonstrates exceptional performance over a 200 nm bandwidth (1450-1650 nm).
    • Insertion loss (IL) is less than 1.2 dB for all modes.
    • Crosstalk (CT) is less than -19 dB for all modes.

    Conclusions:

    • The novel design offers a scalable solution for broadband (de)multiplexers in next-generation MDM systems.
    • This technology enables significant capacity enhancement in photonic integrated circuits.
    • The device effectively addresses bandwidth limitations in optical interconnects.