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Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

793
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
793

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Second harmonic generation in monolithic GaAs shallow waveguides.

Andrea Gerini, Marco Ravaro, Claire Théveneau

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    Researchers developed new low-contrast monolithic waveguides using aluminum gallium arsenide. These photonic circuits offer efficient frequency conversion, bridging a gap in semiconductor technology development.

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    Area of Science:

    • Photonics
    • Semiconductor Science
    • Nonlinear Optics

    Background:

    • Silicon-on-insulator technology has limited development for photonic circuits using quadratically nonlinear semiconductors.
    • High-index-contrast waveguides with III-V cores offer integration but pose industrial up-scaling challenges.
    • Deeply etched, low-contrast monolithic waveguides have limitations in performance.

    Purpose of the Study:

    • To propose and demonstrate a compromise between high-index-contrast and deeply etched monolithic waveguides.
    • To utilize mature laser-diode materials for improved photonic circuit integration.
    • To achieve performant frequency conversion in low-contrast monolithic waveguides.

    Main Methods:

    • Utilized aluminum gallium arsenide, a mature laser-diode material.
    • Fabricated low-contrast monolithic waveguides.
    • Evaluated waveguide performance for frequency conversion applications.

    Main Results:

    • Demonstrated performant low-contrast monolithic waveguides.
    • Successfully employed aluminum gallium arsenide for photonic circuit fabrication.
    • Showcased a viable alternative to existing waveguide integration methods.

    Conclusions:

    • The proposed low-contrast monolithic waveguides offer a practical solution for integrating quadratically nonlinear semiconductors.
    • Aluminum gallium arsenide is a suitable material for developing efficient frequency conversion devices.
    • This approach provides a balance between performance and industrial scalability in photonic integrated circuits.