Post-weld-shift compensation strategy with improved U-net edge detection for reducing coupling loss of 25Gbps TOSA

Optics Express
|August 13, 2025
PubMed
Summary

We developed a deep learning method using MPFG-net to compensate for post-weld-shift in opto-electronic devices. This technique improves optical power by accurately recognizing weld points and optimizing alignment, achieving a 15% power gain.

Related Concept Videos

Reducing Line Loss01:18

Reducing Line Loss

In a three-phase circuit, line loss is an indicator of energy dissipated as heat due to the resistance of transmission lines. To address this, incorporating transformers into the system—a step-up transformer at the source and a step-down transformer at the load—is a strategic solution. Two three-phase transformers are introduced to improve this.
With a step-up transformer at the source, the voltage is increased, thereby reducing the current in the transmission lines since power loss...
193
Transmission Line Design Considerations01:23

Transmission Line Design Considerations

Aluminum has become the material of choice for overhead transmission lines, surpassing copper due to its abundance and cost-effectiveness. The most prevalent type is the aluminum conductor, steel-reinforced (ACSR), which combines aluminum strands around a steel core. Other variants include all-aluminum conductors (AAC), all-aluminum alloy conductors (AAAC), aluminum conductor alloy-reinforced (ACAR), and aluminum-clad steel conductors. Advanced designs, such as aluminum conductors with steel...
213
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
368
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
332
Boundary Conditions: Lossless Lines01:21

Boundary Conditions: Lossless Lines

Consider a single-phase, two-wire, lossless transmission line terminated by an impedance at the receiving end and a source with Thevenin voltage and impedance at the sending end. The line, with length, has a surge impedance and wave velocity determined by the line's inductance and capacitance.
At the receiving end, the boundary condition states that the voltage equals the product of the receiving-end impedance and current. This relationship is expressed as a function of the incident and...
152
Maximum Power Transfer01:16

Maximum Power Transfer

Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
405