Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers...

The static and dynamic characteristics of electrically injected monolithic nano-ridge lasers emitting around the wavelength of 1030 nm are comprehensively investigated, providing critical insights into their performance and identifying pathways for future improvement. Key laser parameters such as the D-factor, the K-factor, the differential gain and the gain compression factor are extracted. Recombination coefficients and carrier escape times are determined by taking the effective carrier capture times derived from the small-signal modulation response. Additionally, the impact of the nano-ridge box size on the recombination coefficients is evaluated, highlighting the role of structural design in optimizing device performance and reliability.