Related Experiment Video
Updated: May 13, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Exploring the elevated Nd:YVO4 temperature for reaching the second threshold condition of the Cr4+:YAG passively
Abstract:
The temperature-dependent second threshold criteria for the Nd:YVO4/Cr4+:YAG passively Q-switched (PQS) laser is explored. The emission cross section of the Nd:YVO4 crystal is found to decrease as temperature elevates, which is feasible to reach the PQS second threshold with a flexible cavity design. We derive theoretical analysis and experimentally verify it by demonstrating the cavity mode size ratio variation between those on the gain medium and the saturable absorber. With the successful demonstration of reaching the second threshold condition by increasing the Nd:YVO4 temperature, an application of the intracavity stimulated Raman scattering is further explored to show the benefit of this method.
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